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DMP3056LSD-13
Dual MOSFET, P Channel, 30 V, 30 V, 6.9 A, 6.9 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMP3056LSD-13
Order Code3944148RL
Your Part Number
Technical Datasheet
854 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.644 (S$0.702) |
| 500+ | S$0.497 (S$0.5417) |
| 1000+ | S$0.452 (S$0.4927) |
| 5000+ | S$0.326 (S$0.3553) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
S$64.40 (S$70.20 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMP3056LSD-13
Order Code3944148RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id6.9A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel6.9A
On Resistance Rds(on)0.045ohm
Continuous Drain Current Id P Channel6.9A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.045ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.7V
Power Dissipation Pd2.5W
No. of Pins8Pins
Power Dissipation N Channel2.5W
Power Dissipation P Channel2.5W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
6.9A
Continuous Drain Current Id N Channel
6.9A
Continuous Drain Current Id P Channel
6.9A
Drain Source On State Resistance N Channel
-
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
No. of Pins
8Pins
Power Dissipation P Channel
2.5W
Product Range
-
Automotive Qualification Standard
-
Channel Type
P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.045ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.045ohm
Transistor Case Style
SOIC
Power Dissipation Pd
2.5W
Power Dissipation N Channel
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001