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DMT6012LSS-13
Power MOSFET, N Channel, 60 V, 10.4 A, 0.0084 ohm, SOIC, Surface Mount
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1,999 In Stock
2,500 more incoming. You can reserve stock now
1999 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.844 (S$0.920) |
| 10+ | S$0.578 (S$0.630) |
| 100+ | S$0.388 (S$0.4229) |
| 500+ | S$0.302 (S$0.3292) |
| 1000+ | S$0.260 (S$0.2834) |
| 5000+ | S$0.250 (S$0.2725) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
S$4.22 (S$4.60 inc GST)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMT6012LSS-13
Order Code3943880
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id10.4A
Drain Source On State Resistance0.0084ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation1.2W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
10.4A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
1.2W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0084ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001