Print Page
MMDT5451-7-F
Bipolar Transistor Array, Dual, Complementary NPN and PNP, 160 V, 160 V, 200 mA, 200 mA, 200 mW
Image is for illustrative purposes only. Please refer to product description.
3,079 In Stock
Need more?
35 Next business day delivery available(SG stock)
3044 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.497 (S$0.5417) |
| 10+ | S$0.303 (S$0.3303) |
| 100+ | S$0.190 (S$0.2071) |
| 500+ | S$0.132 (S$0.1439) |
| 1000+ | S$0.084 (S$0.0916) |
| 5000+ | S$0.064 (S$0.0698) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
S$2.48 (S$2.71 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoMMDT5451-7-F
Order Code1773648
Technical Datasheet
Transistor PolarityComplementary NPN and PNP
Collector Emitter Voltage Max NPN160V
Collector Emitter Voltage Max PNP160V
Continuous Collector Current NPN200mA
Continuous Collector Current PNP200mA
Power Dissipation NPN200mW
Power Dissipation PNP200mW
DC Current Gain hFE Min NPN80hFE
DC Current Gain hFE Min PNP80hFE
Transistor Case StyleSOT-363
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN300MHz
Transition Frequency PNP300MHz
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMDT5451-7-F is a NPN-PNP complementary small signal Bipolar Transistor Array ideal for medium power amplification and switching applications.
- UL94V-0 Flammability rating
- Epitaxial planar die construction
- Ultra-small surface-mount package
- Green device
- -55 to 150°C Operating temperature range
- Complementary pair (5551 - NPN and 5401 - PNP)
Applications
Aerospace, Defence, Military, Power Management, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary NPN and PNP
Collector Emitter Voltage Max PNP
160V
Continuous Collector Current PNP
200mA
Power Dissipation PNP
200mW
DC Current Gain hFE Min PNP
80hFE
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
300MHz
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage Max NPN
160V
Continuous Collector Current NPN
200mA
Power Dissipation NPN
200mW
DC Current Gain hFE Min NPN
80hFE
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Transition Frequency NPN
300MHz
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006