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ZVN2106A
Power MOSFET, N Channel, 60 V, 450 mA, 2 ohm, TO-226AA, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$1.280 (S$1.3952) |
| 10+ | S$0.920 (S$1.0028) |
| 100+ | S$0.606 (S$0.6605) |
| 500+ | S$0.507 (S$0.5526) |
| 1000+ | S$0.467 (S$0.509) |
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Multiple: 1
S$1.28 (S$1.40 inc GST)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZVN2106A
Order Code9525432
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id450mA
Drain Source On State Resistance2ohm
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation700mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The ZVN2106A is a N-channel enhancement mode MOSFET with 8A pulsed drain current.
- ±20V Gate Source Voltage
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
450mA
Transistor Case Style
TO-226AA
Rds(on) Test Voltage
10V
Power Dissipation
700mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00034