Print Page
ZXMC3A17DN8TA
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4.4 A, 4.4 A, 0.07 ohm
Image is for illustrative purposes only. Please refer to product description.
168 In Stock
Need more?
168 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.893 (S$0.9734) |
| 250+ | S$0.876 (S$0.9548) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
S$89.30 (S$97.34 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMC3A17DN8TA
Order Code1471154RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id4.4A
On Resistance Rds(on)0.07ohm
Continuous Drain Current Id N Channel4.4A
Continuous Drain Current Id P Channel4.4A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.07ohm
Drain Source On State Resistance P Channel0.07ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
Power Dissipation Pd2.1W
No. of Pins8Pins
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The ZXMC3A17DN8TA is a N/P-channel complementary enhancement-mode MOSFET utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. It is ideal for high efficiency, low voltage and LCD backlighting applications.
- Low ON-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- Low profile
Applications
Industrial, Power Management, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.07ohm
Continuous Drain Current Id P Channel
4.4A
Drain Source On State Resistance N Channel
0.07ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Power Dissipation P Channel
2.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
4.4A
Continuous Drain Current Id N Channel
4.4A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.07ohm
Transistor Case Style
SOIC
Power Dissipation Pd
2.1W
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00025