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ZXMC4559DN8TA
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 3.9 A, 3.9 A, 0.105 ohm
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMC4559DN8TA
Order Code1471155RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id3.9A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.105ohm
Continuous Drain Current Id N Channel3.9A
Continuous Drain Current Id P Channel3.9A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.105ohm
Drain Source On State Resistance P Channel0.105ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation Pd2.1W
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jan-2018)
Alternatives for ZXMC4559DN8TA
1 Product Found
Product Overview
The ZXMC4559DN8TA is a N/P-channel complementary Pair enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for DC-to-DC converters and LCD backlighting applications.
- Low input capacitance
- Low ON-resistance
- Fast switching speed
- Halogen-free
- UL94V-0 Flammability rating
- Qualified to AEC-Q101 standards for high reliability
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
3.9A
On Resistance Rds(on)
0.105ohm
Continuous Drain Current Id P Channel
3.9A
Drain Source On State Resistance N Channel
0.105ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
2.1W
Power Dissipation P Channel
2.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (15-Jan-2018)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
3.9A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.105ohm
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000273