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BSO615CGHUMA1
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 3.1 A, 3.1 A, 0.07 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSO615CGHUMA1
Order Code2480777
Also Known AsBSO615C G, SP000216311
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$1.470 (S$1.6023) |
| 10+ | S$1.140 (S$1.2426) |
| 100+ | S$0.935 (S$1.0192) |
| 500+ | S$0.791 (S$0.8622) |
| 1000+ | S$0.676 (S$0.7368) |
| 5000+ | S$0.624 (S$0.6802) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
S$1.47 (S$1.60 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSO615CGHUMA1
Order Code2480777
Also Known AsBSO615C G, SP000216311
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel3.1A
Continuous Drain Current Id P Channel3.1A
Drain Source On State Resistance N Channel0.07ohm
Drain Source On State Resistance P Channel0.07ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSO615C G is a SIPMOS® dual N/P-channel enhancement-mode Small Signal Transistor for DC-to-DC converter and on-board charger applications. It is a complementary MOSFET with n-channel and a p-channel power transistor within the same package.
- Avalanche rated
- Logic level
Applications
Industrial, Power Management, Motor Drive & Control, Automotive
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
3.1A
Drain Source On State Resistance P Channel
0.07ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
3.1A
Drain Source On State Resistance N Channel
0.07ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Indonesia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Indonesia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005