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FF11MR12W1M1B70BPSA1
Silicon Carbide MOSFET, Half Bridge, N Channel, 100 A, 1.2 kV, 0.0113 ohm, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoFF11MR12W1M1B70BPSA1
Order Code3755139
Product RangeCoolSiC Trench Series
Also Known AsSP004486464, FF11MR12W1M1_B70
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoFF11MR12W1M1B70BPSA1
Order Code3755139
Product RangeCoolSiC Trench Series
Also Known AsSP004486464, FF11MR12W1M1_B70
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id100A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0113ohm
Transistor Case StyleModule
No. of Pins18Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max5.55V
Power Dissipation-
Operating Temperature Max150°C
Product RangeCoolSiC Trench Series
SVHCNo SVHC (08-Jul-2021)
Product Overview
FF11MR12W1M1B70BPSA1 is an EasyDUAL module with CoolSiC™ Trench MOSFET and PressFIT/NTC. Potential applications includes high frequency switching application, DC/DC converter, solar application, USP systems.
- High current density, low inductive design, low switching losses
- Integrated NTC temperature sensor, press FIT contact technology
- Rugged mounting due to integrated mounting clamps
- Improved ceramic substrate
- Drain-source voltage is 1200V (Tvj = 25°C)
- DC drain current is 100A (Tvj = 175°C, VGS = 15V, TH = 95°C)
- Zero gate voltage drain current is 040µA (typ, Tvj = 25°C, VDS = 1200V, VGS = -5V)
- Rise time, inductive load is 164ns (typ, VGS = -5V / 15V, Tvj = 125°C)
- Temperature under switching conditions range from -40 to 150°C
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.0113ohm
No. of Pins
18Pins
Gate Source Threshold Voltage Max
5.55V
Operating Temperature Max
150°C
SVHC
No SVHC (08-Jul-2021)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation
-
Product Range
CoolSiC Trench Series
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.024721