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FF2MR12KM1HHPSA1
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 290 A, 1.2 kV, 0.00196 ohm, Module
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ManufacturerINFINEON
Manufacturer Part NoFF2MR12KM1HHPSA1
Order Code4305730
Product Range62mm C Series
Also Known AsFF2MR12KM1H, SP005861524
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$580.220 (S$632.4398) |
| 5+ | S$568.620 (S$619.7958) |
Price for:Each
Minimum: 1
Multiple: 1
S$580.22 (S$632.44 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoFF2MR12KM1HHPSA1
Order Code4305730
Product Range62mm C Series
Also Known AsFF2MR12KM1H, SP005861524
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id290A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.00196ohm
Transistor Case StyleModule
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.15V
Power Dissipation-
Operating Temperature Max175°C
Product Range62mm C Series
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
290A
Drain Source On State Resistance
0.00196ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.15V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
18V
Power Dissipation
-
Product Range
62mm C Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001