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IMBG65R060M2HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 34.9 A, 650 V, 0.055 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMBG65R060M2HXTMA1
Order Code4640389RL
Also Known AsIMBG65R060M2H, SP006051147
Technical Datasheet
290 In Stock
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290 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 10+ | S$7.300 (S$7.957) |
| 100+ | S$5.900 (S$6.431) |
| 500+ | S$5.250 (S$5.7225) |
| 1000+ | S$4.490 (S$4.8941) |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
S$73.00 (S$79.57 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG65R060M2HXTMA1
Order Code4640389RL
Also Known AsIMBG65R060M2H, SP006051147
Technical Datasheet
Continuous Drain Current Id34.9A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.055ohm
No. of Pins7Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max5.6V
Power Dissipation148W
Operating Temperature Max175°C
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Continuous Drain Current Id
34.9A
Drain Source On State Resistance
0.055ohm
Rds(on) Test Voltage
20V
Power Dissipation
148W
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001