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IPA60R190P6XKSA1
Power MOSFET, N Channel, 600 V, 20.2 A, 0.171 ohm, TO-220FP, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPA60R190P6XKSA1
Order Code2420503
Also Known AsIPA60R190P6, SP001017080
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$3.740 (S$4.0766) |
| 10+ | S$2.870 (S$3.1283) |
| 100+ | S$2.280 (S$2.4852) |
| 500+ | S$1.910 (S$2.0819) |
| 1000+ | S$1.640 (S$1.7876) |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPA60R190P6XKSA1
Order Code2420503
Also Known AsIPA60R190P6, SP001017080
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id20.2A
Drain Source On State Resistance0.171ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation34W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPA60R190P6 is a N-channel power MOSFET with 650VDS drain source voltage. Infineon's CoolMOS™ P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease of use.
- Reduced gate charge (Qg)
- Higher V th
- Good body diode ruggedness
- Optimized integrated Rg
- Improved dV/dt from 50V/ns
- CoolMOS™ quality with over 12 years manufacturing experience in Superjunction technology
- Increased MOSFET dV/dt ruggedness
- Extremely low losses due to very low FOM RDS (ON) x Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Improved efficiency especially in light load condition
- Better efficiency in soft switching applications due to earlier turn-OFF
Applications
Power Management, Communications & Networking, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
20.2A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
34W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.171ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006