Print Page
IPA65R190C7XKSA1
Power MOSFET, N Channel, 650 V, 8 A, 0.168 ohm, TO-220FP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPA65R190C7XKSA1
Order Code2420509
Also Known AsIPA65R190C7, SP001080140
Technical Datasheet
484 In Stock
Need more?
484 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$3.460 (S$3.7714) |
| 10+ | S$2.650 (S$2.8885) |
| 100+ | S$2.110 (S$2.2999) |
| 500+ | S$1.760 (S$1.9184) |
| 1000+ | S$1.510 (S$1.6459) |
Price for:Each
Minimum: 1
Multiple: 1
S$3.46 (S$3.77 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPA65R190C7XKSA1
Order Code2420509
Also Known AsIPA65R190C7, SP001080140
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id8A
Drain Source On State Resistance0.168ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation30W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPA65R190C7 is a N-channel power MOSFET with 650VDS drain source voltage. Infineon's new CoolMOS™ C7 series is a revolutionary step forward in technology, providing the worlds' lowest RDS (ON) and thanks to its low switching losses, efficiency improvements over the full load range.
- Revolutionary Best-in-class RDS (ON)
- Reduced energy stored in output capacitance (Eoss)
- Lower gate charge Qg
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses/package
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS™ quality
Applications
Power Management, Communications & Networking, Industrial, Alternative Energy
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
30W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.168ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Alternatives for IPA65R190C7XKSA1
1 Product Found
Associated Products
6 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006