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IPB038N12N3GATMA1
Power MOSFET, N Channel, 120 V, 120 A, 3800 µohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB038N12N3GATMA1Copy
Manufacturer Standard Lead Time10 weeks
Order Code
Re-Reel2212825RL
Cut Tape2212825
Also Known AsIPB038N12N3 G, SP000694160
Your Part Number
431 In Stock
Need more?
431 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price (excl GST): | Total |
|---|---|---|---|
| Cut Tape | 1 | S$8.090 | S$8.09 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$8.090 (S$8.8181) |
| 10+ | S$6.280 (S$6.8452) |
| 50+ | S$4.690 (S$5.1121) |
| 200+ | S$4.440 (S$4.8396) |
| 500+ | S$4.180 (S$4.5562) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB038N12N3GATMA1Copy
Manufacturer Standard Lead Time10 weeks
Order Code
Re-Reel2212825RL
Cut Tape2212825
Also Known AsIPB038N12N3 G, SP000694160
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id120A
Drain Source On State Resistance3800µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IPB038N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance R DS(on)
- Excellent gate charge x RDS (NO) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- N-channel, normal level
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Computers & Computer Peripherals, Portable Devices, LED Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
120V
Drain Source On State Resistance
3800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00181