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IPB200N25N3GATMA1
Power MOSFET, N Channel, 250 V, 64 A, 0.0175 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB200N25N3GATMA1
Order Code2432726
Also Known AsIPB200N25N3 G, SP000677896
Technical Datasheet
32,844 In Stock
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92 Next business day delivery available(SG stock)
32752 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$9.760 (S$10.6384) |
| 10+ | S$8.200 (S$8.938) |
| 50+ | S$6.630 (S$7.2267) |
| 200+ | S$6.280 (S$6.8452) |
| 500+ | S$5.930 (S$6.4637) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
S$9.76 (S$10.64 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB200N25N3GATMA1
Order Code2432726
Also Known AsIPB200N25N3 G, SP000677896
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id64A
Drain Source On State Resistance0.0175ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPB200N25N3 G is a N-channel Power MOSFET produce based on OptiMOS™ leading benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.
- Industry's lowest RDS (ON)
- Lowest Qg and Qgd
- World's lowest FOM, MSL 1 rated
- Highest efficiency
- Highest Power density
- Minimal device paralleling required
- Environmentally friendly
- Easy-to-design-in products
- Ideal for high-frequency switching and synchronous rectification
- Qualified according to JEDEC for target application
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Industrial, Lighting, Audio
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
64A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.0175ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00181