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IPP111N15N3GXKSA1
Power MOSFET, N Channel, 150 V, 83 A, 0.0094 ohm, TO-220, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPP111N15N3GXKSA1
Order Code2480854
Also Known AsIPP111N15N3 G, SP000677860
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$6.770 (S$7.3793) |
| 10+ | S$5.360 (S$5.8424) |
| 100+ | S$4.550 (S$4.9595) |
| 500+ | S$3.850 (S$4.1965) |
| 1000+ | S$3.490 (S$3.8041) |
Price for:Each
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Multiple: 1
S$6.77 (S$7.38 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP111N15N3GXKSA1
Order Code2480854
Also Known AsIPP111N15N3 G, SP000677860
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id83A
Drain Source On State Resistance0.0094ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation214W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPP111N15N3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Normal level
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Automotive, Communications & Networking, Audio
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
83A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
214W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.0094ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002008