IPP65R190C7FKSA1
Power MOSFET, N Channel, 650 V, 13 A, 0.168 ohm, TO-220, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$3.840 (S$4.1856) |
| 10+ | S$2.940 (S$3.2046) |
| 100+ | S$2.340 (S$2.5506) |
| 500+ | S$1.960 (S$2.1364) |
| 1000+ | S$1.680 (S$1.8312) |
Product Information
Product Overview
The IPP65R190C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS™ quality
Applications
Industrial, Power Management, Alternative Energy, Communications & Networking
Technical Specifications
N Channel
13A
TO-220
10V
72W
150°C
-
No SVHC (21-Jan-2025)
650V
0.168ohm
Through Hole
3.5V
3Pins
-
-
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Associated Products
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate