Need more?
Quantity | Price (inc GST) |
---|---|
1+ | S$15.250 (S$16.6225) |
5+ | S$11.720 (S$12.7748) |
10+ | S$9.790 (S$10.6711) |
50+ | S$8.970 (S$9.7773) |
100+ | S$8.410 (S$9.1669) |
250+ | S$8.000 (S$8.720) |
Product Information
Alternatives for IPW65R080CFDFKSA1
1 Product Found
Product Overview
The IPW65R080CFD is a 650V N-channel CoolMOS™ Power MOSFET with integrated fast body diode and improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this MOSFET a clear advantage. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Limited voltage overshoot during hard commutation
- Easy to design in
- Low switching losses due to low Qrr at repetitive commutation on body diode
- Self limiting di/dt and dv/dt
- Low Qoss
- Reduced turn on and turn off delay times
Applications
Communications & Networking, Computers & Computer Peripherals, Alternative Energy, LED Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
43.3A
TO-247
10V
391W
150°C
-
700V
0.08ohm
Through Hole
4V
3Pins
-
Technical Docs (2)
Associated Products
8 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate