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Quantity | Price (inc GST) |
---|---|
1+ | S$12.770 (S$13.9193) |
10+ | S$9.830 (S$10.7147) |
25+ | S$8.690 (S$9.4721) |
50+ | S$8.400 (S$9.156) |
100+ | S$8.110 (S$8.8399) |
250+ | S$7.280 (S$7.9352) |
500+ | S$7.140 (S$7.7826) |
Product Information
Alternatives for IR2213PBF
1 Product Found
Product Overview
The IR2213PBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 1200V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3V Logic compatible
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
2Channels
High Side and Low Side
14Pins
Through Hole
2A
12V
-40°C
280ns
-
-
-
IGBT, MOSFET
DIP
Non-Inverting
2.5A
20V
125°C
225ns
-
No SVHC (23-Jan-2024)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate