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Quantity | Price (inc GST) |
---|---|
1+ | S$3.310 (S$3.6079) |
10+ | S$2.170 (S$2.3653) |
50+ | S$1.860 (S$2.0274) |
100+ | S$1.550 (S$1.6895) |
250+ | S$1.520 (S$1.6568) |
Product Information
Product Overview
The IRF3205STRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rating
Applications
Power Management
Technical Specifications
N Channel
110A
TO-263 (D2PAK)
10V
200W
175°C
-
No SVHC (21-Jan-2025)
55V
0.008ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for IRF3205STRLPBF
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Associated Products
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate