IRF630NSPBF
Power MOSFET, N Channel, 200 V, 9.3 A, 0.3 ohm, TO-263 (D2PAK), Surface Mount
Product Information
Alternatives for IRF630NSPBF
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Product Overview
The IRF630NSPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rating
- Ease of paralleling
- Simple drive requirements
Applications
Power Management
Technical Specifications
N Channel
9.3A
TO-263 (D2PAK)
10V
82W
175°C
-
200V
0.3ohm
Surface Mount
4V
3Pins
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate