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IRF640NSPBF
Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-263 (D2PAK), Surface Mount
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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF640NSPBF
Order Code8648387
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id18A
Drain Source On State Resistance0.15ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Alternatives for IRF640NSPBF
2 Products Found
Product Overview
The IRF640NSPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
- 175°C Operating temperature
- Fully avalanche rated
- Dynamic dV/dt rating
- Easy to parallel
- Simple drive requirement
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
18A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.15ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001588