IRF7105TRPBF
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 3.5 A, 3.5 A, 0.083 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.942 (S$1.0268) |
| 50+ | S$0.631 (S$0.6878) |
| 250+ | S$0.490 (S$0.5341) |
| 1000+ | S$0.447 (S$0.4872) |
| 2000+ | S$0.410 (S$0.4469) |
Product Information
Product Overview
The IRF7105TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Advanced process technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Technical Specifications
Complementary N and P Channel
25V
3.5A
0.083ohm
8Pins
2W
-
MSL 1 - Unlimited
25V
3.5A
0.083ohm
SOIC
2W
150°C
-
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate