IRF7201PBF
Power MOSFET, N Channel, 30 V, 7.3 A, 0.03 ohm, SOIC, Surface Mount
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF7201PBFCopy |
| Order Code | 9102663 |
| Your Part Number | |
| Technical Datasheet |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF7201PBFCopy |
| Order Code | 9102663 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 30V |
| Continuous Drain Current Id | 7.3A |
| Drain Source On State Resistance | 0.03ohm |
| Transistor Case Style | SOIC |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 1V |
| Power Dissipation | 2.5W |
| No. of Pins | 8Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
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2 Products Found
Product Overview
The IRF7201PBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
- Generation V technology
- Dynamic dV/dt rating
- Fast switching
- Low static drain-to-source ON-resistance
- Fully avalanche rating
Applications
Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 7.3A |
| Transistor Case Style | SOIC |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 2.5W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Drain Source Voltage Vds | 30V |
|---|---|
| Drain Source On State Resistance | 0.03ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 1V |
| No. of Pins | 8Pins |
| Product Range | - |
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | To be advised |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .0005 |