IRF7205PBF
Power MOSFET, P Channel, 30 V, 4.6 A, 0.07 ohm, SOIC, Surface Mount
Product Information
Alternatives for IRF7205PBF
1 Product Found
Product Overview
The IRF7205PBF is a HEXFET® fourth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
- Advanced process technology
- Dynamic dV/dt rating
- Fast switching
- Low static drain-to-source ON-resistance
- Fully avalanche rating
Applications
Power Management
Technical Specifications
P Channel
4.6A
SOIC
10V
2.5W
150°C
-
30V
0.07ohm
Surface Mount
3V
8Pins
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate