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IRF7341GTRPBF
Dual MOSFET, N Channel, 55 V, 55 V, 5.1 A, 5.1 A, 0.043 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRF7341GTRPBF
Order Code2839483
Product RangeHEXFET Series
Also Known AsIRF7341GTRPBF, SP001563394
Technical Datasheet
3,760 In Stock
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3760 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$1.940 (S$2.1146) |
| 50+ | S$1.580 (S$1.7222) |
| 250+ | S$1.270 (S$1.3843) |
| 1000+ | S$1.140 (S$1.2426) |
| 2000+ | S$1.090 (S$1.1881) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
S$9.70 (S$10.57 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7341GTRPBF
Order Code2839483
Product RangeHEXFET Series
Also Known AsIRF7341GTRPBF, SP001563394
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel55V
Drain Source Voltage Vds P Channel55V
Continuous Drain Current Id N Channel5.1A
Continuous Drain Current Id P Channel5.1A
Drain Source On State Resistance N Channel0.043ohm
Drain Source On State Resistance P Channel0.043ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.7W
Power Dissipation P Channel1.7W
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
HEXFET® power MOSFET utilize the latest processing techniques to achieve extremely low on-resistance per silicon area.
- Advanced process technology
- Dual N-channel MOSFET
- Ultra-low on-resistance
- 175°C operating temperature
- Repetitive avalanche allowed up to Tjmax
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
55V
Continuous Drain Current Id P Channel
5.1A
Drain Source On State Resistance P Channel
0.043ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.7W
Product Range
HEXFET Series
MSL
-
Drain Source Voltage Vds N Channel
55V
Continuous Drain Current Id N Channel
5.1A
Drain Source On State Resistance N Channel
0.043ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.7W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001