IRF7342TRPBF
Dual MOSFET, P Channel, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 ohm
4,000 more incoming. You can reserve stock now
| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.941 (S$1.0257) |
| 500+ | S$0.836 (S$0.9112) |
| 1000+ | S$0.645 (S$0.703) |
| 5000+ | S$0.621 (S$0.6769) |
Product Information
Product Overview
The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Technical Specifications
P Channel
55V
3.4A
0.095ohm
3.4A
0.095ohm
0.095ohm
SOIC
8Pins
2W
-
-
No SVHC (21-Jan-2025)
P Channel
55V
55V
3.4A
Surface Mount
10V
1V
2W
2W
150°C
-
-
Alternatives for IRF7342TRPBF
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Associated Products
4 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate