IRF7401PBF
Power MOSFET, N Channel, 20 V, 8.7 A, 0.022 ohm, SOIC, Surface Mount
Product Information
Product Overview
The IRF7401PBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
- Generation V technology
- Dynamic dV/dt rating
- Fast switching
- Low static drain-to-source ON-resistance
- Fully avalanche rating
Applications
Power Management
Technical Specifications
N Channel
8.7A
SOIC
4.5V
8Pins
-
20V
0.022ohm
Surface Mount
2.5W
150°C
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate