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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7832PBF
Order Code1013449
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id20A
Drain Source On State Resistance4000µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.32V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max155°C
Product Range-
Qualification-
Alternatives for IRF7832PBF
1 Product Found
Product Overview
The IRF7832PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for notebook processor power and isolated DC-to-DC converters.
- Ultra-low gate impedance
- Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
- 100% Rg tested
- 20V VGS Maximum gate rating
Applications
Computers & Computer Peripherals, Communications & Networking, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
155°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
4000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.32V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000167
