Print Page
IRF8915TRPBF
Dual MOSFET, N Channel, 20 V, 20 V, 8.9 A, 8.9 A, 0.0146 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF8915TRPBF
Order Code2579951RL
Product RangeHEXFET Series
Also Known AsSP001554494
Technical Datasheet
360 In Stock
Need more?
360 Delivery in 3-4 Business Days(UK stock)
Available until stock is exhausted
| Quantity | Price (inc GST) |
|---|---|
| 100+ | S$0.654 (S$0.7129) |
| 500+ | S$0.553 (S$0.6028) |
| 1000+ | S$0.473 (S$0.5156) |
| 5000+ | S$0.437 (S$0.4763) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
S$65.40 (S$71.29 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF8915TRPBF
Order Code2579951RL
Product RangeHEXFET Series
Also Known AsSP001554494
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id8.9A
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel8.9A
On Resistance Rds(on)0.0146ohm
Continuous Drain Current Id P Channel8.9A
Drain Source On State Resistance N Channel0.0146ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.0146ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Transistor Case StyleSOIC
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
Automotive Qualification Standard-
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
8.9A
Continuous Drain Current Id N Channel
8.9A
Continuous Drain Current Id P Channel
8.9A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (08-Jul-2021)
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.0146ohm
Drain Source On State Resistance N Channel
0.0146ohm
Drain Source On State Resistance P Channel
0.0146ohm
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001