IRF9952PBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.5 A, 3.5 A, 0.1 ohm
Product Information
Alternatives for IRF9952PBF
1 Product Found
Product Overview
The IRF9952PBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infra-red or wave soldering techniques.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Very low gate charge and switching losses
- Fully avalanche rated
Applications
Industrial, Power Management
Technical Specifications
Complementary N and P Channel
30V
3.5A
0.1ohm
8Pins
2W
-
MSL 1 - Unlimited
30V
3.5A
0.1ohm
SOIC
2W
150°C
-
No SVHC (17-Dec-2015)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate