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IRF9953TRPBF
Dual MOSFET, P Channel, 30 V, 30 V, 2.3 A, 2.3 A, 0.165 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRF9953TRPBF
Order Code2725931RL
Product RangeHEXFET Series
Also Known AsSP001555962
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF9953TRPBF
Order Code2725931RL
Product RangeHEXFET Series
Also Known AsSP001555962
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id2.3A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.165ohm
Continuous Drain Current Id N Channel2.3A
Continuous Drain Current Id P Channel2.3A
Drain Source On State Resistance N Channel0.165ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.165ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
No. of Pins8Pins
Power Dissipation Pd2W
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (08-Jul-2021)
Product Overview
HEXFET® power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
- Generation V technology
- Ultra-low on-resistance
- Dual P-channel MOSFET
- Surface mount package
- Very low gate charge and switching losses
- Fully avalanche rated
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
2.3A
On Resistance Rds(on)
0.165ohm
Continuous Drain Current Id P Channel
2.3A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.165ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
2W
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (08-Jul-2021)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
2.3A
Drain Source On State Resistance N Channel
0.165ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000726