Print Page
IRFHM8228TRPBF
Power MOSFET, N Channel, 25 V, 19 A, 5200 µohm, PQFN, Surface Mount
No Longer Manufactured
Packaging Options
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFHM8228TRPBFCopy
Order Code
Re-Reel2577165RL
Cut Tape2577165
Product RangeHEXFET
Also Known AsSP001556578
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id19A
Drain Source On State Resistance5200µohm
Transistor Case StylePQFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation2.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
19A
Transistor Case Style
PQFN
Rds(on) Test Voltage
10V
Power Dissipation
2.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
25V
Drain Source On State Resistance
5200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
HEXFET
MSL
MSL 2 - 1 year
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001