IRFL014NTRPBF
Power MOSFET, N Channel, 55 V, 1.9 A, 0.16 ohm, SOT-223, Surface Mount
5,000 more incoming. You can reserve stock now
| Quantity | Price (inc GST) |
|---|---|
| 5+ | S$0.578 (S$0.630) |
| 50+ | S$0.551 (S$0.6006) |
| 100+ | S$0.524 (S$0.5712) |
| 500+ | S$0.405 (S$0.4414) |
| 1000+ | S$0.367 (S$0.400) |
Product Information
Product Overview
The IRFL014NTRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation of 1W is possible in a typical surface-mount application.
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rating
- Low static drain-to-source ON-resistance
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
1.9A
SOT-223
10V
1W
150°C
-
No SVHC (21-Jan-2025)
55V
0.16ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate