IRFP4332PBF
Power MOSFET, N Channel, 250 V, 57 A, 0.029 ohm, TO-247AC, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$6.580 (S$7.1722) |
| 10+ | S$3.700 (S$4.033) |
| 100+ | S$3.360 (S$3.6624) |
| 500+ | S$3.010 (S$3.2809) |
| 1000+ | S$2.870 (S$3.1283) |
Product Information
Product Overview
The IRFP4332PBF is a HEXFET® single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
- Advanced process technology
- Low EPULSE rating to reduce power dissipation
- Low Qg for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
Applications
Consumer Electronics, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
57A
TO-247AC
10V
120mW
175°C
-
No SVHC (21-Jan-2025)
250V
0.029ohm
Through Hole
5V
3Pins
-
-
Technical Docs (3)
Associated Products
5 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate