IRFZ44NLPBF
Power MOSFET, HEXFET, N Channel, 55 V, 49 A, 0.0175 ohm, TO-262, Through Hole
Product Information
Product Overview
The IRFZ44NLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Power Management
Technical Specifications
N Channel
49A
TO-262
10V
110W
175°C
-
55V
0.0175ohm
Through Hole
4V
3Pins
-
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate