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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRG4BC20KDPBFCopy
Order Code1463244
Product RangeIRG4
Also Known AsSP001544718
Technical Datasheet
Continuous Collector Current16A
Collector Emitter Saturation Voltage2.27V
Power Dissipation60W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product RangeIRG4
Product Overview
The IRG4BC20KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequency of <gt/>5kHz and short-circuit rated to 10µs at 125°C, VGE = 15V. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.
Applications
Consumer Electronics, HVAC, Lighting, Alternative Energy, Power Management
Technical Specifications
Continuous Collector Current
16A
Power Dissipation
60W
Transistor Case Style
TO-220AB
Operating Temperature Max
150°C
Product Range
IRG4
Collector Emitter Saturation Voltage
2.27V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002041