IRLI520NPBF
Power MOSFET, N Channel, 100 V, 7.7 A, 0.18 ohm, TO-220FP, Through Hole
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLI520NPBFCopy |
| Order Code | 8651140 |
| Also Known As | SP001576820 |
| Your Part Number | |
| Technical Datasheet |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLI520NPBFCopy |
| Order Code | 8651140 |
| Also Known As | SP001576820 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 100V |
| Continuous Drain Current Id | 7.7A |
| Drain Source On State Resistance | 0.18ohm |
| Transistor Case Style | TO-220FP |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 2V |
| Power Dissipation | 27W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Qualification | - |
Product Overview
The IRLI520NPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier. The package is mounted to a heat sink using a single clip or by a single screw fixing.
- Logic level gate drive
- Advanced process technology
- Isolated package
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Logic level
Applications
Commercial, Industrial, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 7.7A |
| Transistor Case Style | TO-220FP |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 27W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| Drain Source Voltage Vds | 100V |
|---|---|
| Drain Source On State Resistance | 0.18ohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 2V |
| No. of Pins | 3Pins |
| Product Range | - |
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .002 |