
Product Information
Product Overview
The IRLI520NPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier. The package is mounted to a heat sink using a single clip or by a single screw fixing.
- Logic level gate drive
- Advanced process technology
- Isolated package
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Logic level
Applications
Commercial, Industrial, Power Management
Technical Specifications
N Channel
7.7A
TO-220FP
10V
27W
175°C
-
100V
0.18ohm
Through Hole
2V
3Pins
-
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate
