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IRLR3105PBF
Power MOSFET, N Channel, 55 V, 25 A, 0.037 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLR3105PBFCopy |
| Order Code | 8660158 |
| Also Known As | SP001572894 |
| Your Part Number | |
| Technical Datasheet |
No Longer Manufactured
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLR3105PBFCopy |
| Order Code | 8660158 |
| Also Known As | SP001572894 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 55V |
| Continuous Drain Current Id | 25A |
| Drain Source On State Resistance | 0.037ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 3V |
| Power Dissipation | 57W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Qualification | - |
Alternatives for IRLR3105PBF
1 Product Found
Product Overview
The IRLR3105PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The package is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Logic level gate drive
- Advanced process technology
- Repetitive avalanche allowed up to Tjmax
- Dynamic dV/dt rating
- Fully avalanche rating
Applications
Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 25A |
| Transistor Case Style | TO-252 (DPAK) |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 57W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| Drain Source Voltage Vds | 55V |
|---|---|
| Drain Source On State Resistance | 0.037ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 3V |
| No. of Pins | 3Pins |
| Product Range | - |
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | To be advised |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000683 |