IS66WVE4M16EBLL-70BLI

IS66WVE4M16EBLL-70BLI is a 64Mb async/page PSRAM. It is an integrated memory device containing 64Mbit pseudo static random access memory using a self-refresh DRAM array organized as 4M words by 16bits. The device includes several power saving modes : partial array refresh mode where data is retained in a portion of the array and deep power down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. It include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings. For seamless operation on an asynchronous memory bus, PSRAM products incorporated a transparent self-refresh mechanism. The hidden refresh requires no additional support from the system memory controller and has no significant impact on device read/write performance.

• Dual voltage rails for optional performance, VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
• 4Mx16 configuration, 70ns speed
• Asynchronous operation is <lt/>30mA, intrapage read is <lt/>23mA
• Standby is <lt/>200uA (max.) at -40°C~85°C, deep power-down (DPD) is <lt/>10µA (typ)
• Temperature controlled refresh, partial array refresh, deep power-down (DPD) mode
• 48-ball TFBGA package
• Industrial temperature rating range from -40°C to +85°C