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No Longer Manufactured
Product Information
ManufacturerIXYS RF
Manufacturer Part NoIXZR08N120A
Order Code1347745
Technical Datasheet
Drain Source Voltage Vds1.2kV
Continuous Drain Current Id8A
Power Dissipation250W
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleISOPLUS-247
No. of Pins3Pins
Operating Temperature Max175°C
Channel TypeN Channel
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Product Overview
The IXZR08N120A is a N-channel RF Power MOSFET optimized for RF and high speed switching. The device offers isolated substrate, high isolation voltage (>2500V), excellent thermal transfer and increased temperature and power cycling capability.
- Easy to mount
- No insulators needed
- Low gate charge and capacitances
- Easier to drive
- Faster switching
- Low RDS (ON)
- Very low insertion inductance (<2nH)
Applications
Industrial, RF Communications, Power Management
Technical Specifications
Drain Source Voltage Vds
1.2kV
Power Dissipation
250W
Operating Frequency Max
-
No. of Pins
3Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Continuous Drain Current Id
8A
Operating Frequency Min
-
Transistor Case Style
ISOPLUS-247
Operating Temperature Max
175°C
Transistor Mounting
Through Hole
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005