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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH52N30QCopy
Order Code7347952
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id52A
Drain Source On State Resistance0.06ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation360W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IXFH52N30Q is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process, low gate charge and capacitances.
- Avalanche rating
- High dV/dt rating
- Low trr
- International standard packages
- Rugged polysilicon gate cell structure
- Easy to mount
- Space saving
- High power density
- UL94V-0 Flammability rating
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
52A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
360W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006