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IXFN32N120
MOSFET Transistor, N Channel, 32 A, 1.2 kV, 0.35 ohm, 10 V, 5 V
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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN32N120
Order Code7348002
Technical Datasheet
Channel TypeN Channel
Product Range-
Product Overview
The IXFN32N120 is a 1200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- miniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low inductance
- High power density
- Easy to mount
- Space-saving s
Applications
Power Management, Industrial, Lighting
Technical Specifications
Channel Type
N Channel
Product Range
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.039074