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IXFH16N120P
MOSFET, N-CH, 1.2KV, 16A, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerLITTELFUSE
Manufacturer Part NoIXFH16N120P
Order Code3953526
Product RangePolar HiPerFET Series
Technical Datasheet
230 In Stock
300 more incoming. You can reserve stock now
230 Delivery in 4-5 Business Days(US stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$28.320 (S$30.8688) |
| 5+ | S$24.530 (S$26.7377) |
| 10+ | S$20.730 (S$22.5957) |
| 50+ | S$20.220 (S$22.0398) |
| 100+ | S$19.700 (S$21.473) |
| 250+ | S$19.310 (S$21.0479) |
Price for:Each
Minimum: 1
Multiple: 1
S$28.32 (S$30.87 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFH16N120P
Order Code3953526
Product RangePolar HiPerFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source On State Resistance0.95ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max6.5V
Power Dissipation660W
Operating Temperature Max150°C
Product RangePolar HiPerFET Series
Technical Specifications
Channel Type
N Channel
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
6.5V
Operating Temperature Max
150°C
Drain Source On State Resistance
0.95ohm
Rds(on) Test Voltage
10V
Power Dissipation
660W
Product Range
Polar HiPerFET Series
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:0
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907