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IXYP20N65C3D1
IGBT, 50 A, 2.27 V, 200 W, 650 V, TO-220AB, 3 Pins
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322 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$5.600 (S$6.104) |
| 10+ | S$3.100 (S$3.379) |
| 100+ | S$2.850 (S$3.1065) |
| 500+ | S$2.680 (S$2.9212) |
| 1000+ | S$2.510 (S$2.7359) |
Price for:Each
Minimum: 1
Multiple: 1
S$5.60 (S$6.10 inc GST)
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXYP20N65C3D1
Order Code3930255
Technical Datasheet
Continuous Collector Current50A
Collector Emitter Saturation Voltage2.27V
Power Dissipation200W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
Product Overview
Extreme light punch through IGBT for 20-60KHz switching suitable for use in power inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, welding machines, lamp ballasts, high frequency power inverters applications.
- XPT™ 650V GenX3™ w/diode
- Square RBSOA
- Avalanche rated
- Anti-parallel sonic diode
- Short circuit capability
- High power density
- Extremely rugged
- Low gate drive requirement
Technical Specifications
Continuous Collector Current
50A
Power Dissipation
200W
Transistor Case Style
TO-220AB
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
2.27V
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001