DN2530N3-G
Power MOSFET, N Channel, 300 V, 175 mA, 12 ohm, TO-92, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$1.040 (S$1.1336) |
| 25+ | S$0.930 (S$1.0137) |
| 100+ | S$0.859 (S$0.9363) |
| 1000+ | S$0.857 (S$0.9341) |
Product Information
Product Overview
The DN2530N3-G is a N-channel depletion-mode vertical DMOS FET utilizes an advanced vertical diffusion metal oxide semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in metal-oxide semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The low threshold normally-on DMOS field-effect transistor (FET) is ideally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
- Low ON-resistance
- Free from secondary breakdown
- Low input and output leakages
Applications
Power Management, Communications & Networking
Technical Specifications
N Channel
175mA
TO-92
0V
740mW
150°C
-
No SVHC (21-Jan-2025)
300V
12ohm
Through Hole
-
3Pins
-
-
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate