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Quantity | Price (inc GST) |
---|---|
1+ | S$5.660 (S$6.1694) |
10+ | S$5.270 (S$5.7443) |
25+ | S$5.090 (S$5.5481) |
50+ | S$5.000 (S$5.450) |
100+ | S$4.880 (S$5.3192) |
250+ | S$4.730 (S$5.1557) |
500+ | S$4.610 (S$5.0249) |
1000+ | S$4.530 (S$4.9377) |
Product Information
Product Overview
MT47H64M8SH-25E:H is a DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs.
- 64M8 configuration, tCK = 2.5ns, CL = 5 cycle time
- VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
- JEDEC-standard 1.8V I/O (SSTL_18-compatible), differential data strobe (DQS, DQS#) option
- 4n-bit prefetch architecture, duplicate output strobe (RDQS) option for x8
- DLL to align DQ and DQS transitions with CK, 4 internal banks for concurrent operation
- Programmable CAS latency (CL), posted CAS additive latency (AL)
- Adjustable data-output drive strength, on-die termination (ODT)
- Package style is 60-ball FBGA
Technical Specifications
DDR2
64M x 8bit
TFBGA
1.8V
0°C
-
512Mbit
400MHz
60Pins
Surface Mount
85°C
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate