Print Page
MT53E1G32D2FW-046 IT:B
DRAM, LPDDR4, 32 Gbit, 1G x 32bit, 2.133GHz, TFBGA, 200 Pins
Image is for illustrative purposes only. Please refer to product description.
768 In Stock
Need more?
768 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | S$45.570 (S$49.6713) |
| 5+ | S$43.860 (S$47.8074) |
| 10+ | S$42.150 (S$45.9435) |
| 25+ | S$40.800 (S$44.472) |
| 50+ | S$39.790 (S$43.3711) |
Price for:Each
Minimum: 1
Multiple: 1
S$45.57 (S$49.67 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E1G32D2FW-046 IT:B
Order Code3954463
Technical Datasheet
DRAM TypeMobile LPDDR4
Memory Density32Gbit
Memory Configuration1G x 32bit
Clock Frequency Max2.133GHz
IC Case / PackageTFBGA
No. of Pins200Pins
Supply Voltage Nom1.1V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max95°C
Product Range-
SVHCNo SVHC (17-Dec-2015)
Product Overview
MT53E1G32D2 is a 32Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable VSS (ODT) termination
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Selectable output drive strength (DS), clock-stop capability, single-ended CK and DQS support
- 1.10V VDD2 / 0.60V VDDQ or 1.10V VDDQ operating voltage
- 1 Gig x 32 configuration, LPDDR4, 2 die addressing
- 200-ball TFBGA (Ø0.40 SMD) package, 468ps cycle time
- Operating temperature rating range from -40°C to +95°C
Technical Specifications
DRAM Type
Mobile LPDDR4
Memory Configuration
1G x 32bit
IC Case / Package
TFBGA
Supply Voltage Nom
1.1V
Operating Temperature Min
-40°C
Product Range
-
Memory Density
32Gbit
Clock Frequency Max
2.133GHz
No. of Pins
200Pins
IC Mounting
Surface Mount
Operating Temperature Max
95°C
SVHC
No SVHC (17-Dec-2015)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85423239
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907