MT53E2G64D8TN-046 AAT:C

MT53E2G64D8TN-046 AAT:C is a 16Gb mobile low-powerDDR4 SDRAM with low VDDQ. It is a high-speed, CMOS dynamic random-access memory device. This memory is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks. It has directed per-bank refresh for concurrent bank operation and ease of command scheduling. This memory has on-chip temperature sensor to control self refresh rate. It has clock-stop capability and single-data-rate CMD/ADR entry. It has programmable and on-the-fly burst lengths (BL = 16, 32). This memory has bidirectional/differential data strobe per byte lane.

• Operating voltage is 1.10V (VDD2) / 0.60V or 1.10V (VDDQ)
• 2Gig x 64 configuration, LPDDR4, 8die addressing. C design
• Packaging style is 556-ball LFBGA 12.4 x 12.4 x 1.23mm (Ø0.24 SMD)
• Cycle time is 468ps at RL = 36/40, partial-array self refresh (PASR)
• Operating temperature range is –40°C to +105°C, automotive qualified
• Clock rate is 2133MHz, data rate per pin is 4266Mb/s
• Ultra-low-voltage core and I/O power supplies
• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, single-ended CK and DQS support
• Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)