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BSS138PS,115
Dual MOSFET, N Channel, 60 V, 320 mA, 0.9 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 500+ | S$0.100 (S$0.109) |
| 1500+ | S$0.099 (S$0.1079) |
| 3000+ | S$0.094 (S$0.1025) |
| 7500+ | S$0.090 (S$0.0981) |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 5
S$50.00 (S$54.50 inc GST)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSS138PS,115
Order Code1972664RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id320mA
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.9ohm
Continuous Drain Current Id N Channel320mA
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.9ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.2V
No. of Pins6Pins
Power Dissipation Pd420mW
Power Dissipation N Channel420mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSS138PS is a dual N-channel enhancement-mode FET in a surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
- Logic-level compatible
- Very fast switching
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
320mA
On Resistance Rds(on)
0.9ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.9ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.2V
Power Dissipation Pd
420mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
320mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
420mW
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005