Print Page
BUK9K12-60EX
Dual MOSFET, N Channel, 60 V, 60 V, 35 A, 35 A, 0.0107 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
Notify me when back in stock
| Quantity | Price (inc GST) |
|---|---|
| 1500+ | S$0.975 (S$1.0628) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1500
Multiple: 1500
S$1,462.50 (S$1,594.13 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBUK9K12-60EX
Order Code3439702RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id35A
On Resistance Rds(on)0.0085ohm
Continuous Drain Current Id N Channel35A
Continuous Drain Current Id P Channel35A
Drain Source On State Resistance N Channel0.0107ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Transistor Case StyleLFPAK56D
Gate Source Threshold Voltage Max1.7V
No. of Pins8Pins
Power Dissipation Pd68W
Power Dissipation N Channel68W
Power Dissipation P Channel68W
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
0.0085ohm
Continuous Drain Current Id P Channel
35A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
Power Dissipation Pd
68W
Power Dissipation P Channel
68W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
35A
Continuous Drain Current Id N Channel
35A
Drain Source On State Resistance N Channel
0.0107ohm
Drain Source On State Resistance P Channel
-
Transistor Case Style
LFPAK56D
No. of Pins
8Pins
Power Dissipation N Channel
68W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001